? semiconductor components industries, llc, 2006 march, 2006 ? rev. 4 1 publication order number: NTR2101P/d NTR2101P small signal mosfet ? 8.0 v, ? 3.7 a, single p ? channel, sot ? 23 features ? leading trench technology for low r ds(on) ? ? 1.8 v rated for low voltage gate drive ? sot ? 23 surface mount for small footprint (3 x 3 mm) ? pb ? free package is available applications ? high side load switch ? dc ? dc conversion ? cell phone, notebook, pdas, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 8.0 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) t 10 s t a = 25 c i d ? 3.7 a t a = 70 c ? 3.0 power dissipation (note 1) t 10 s p d 0.96 w pulsed drain current tp = 10 s i dm ? 11 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 1.2 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state r ja 160 c/w junction ? to ? ambient ? t 10 s r ja 130 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). device package shipping ? ordering information NTR2101Pt1 sot ? 23 3000/tape & reel v (br)dss r ds(on) typ i d max ? 8.0 v 39 m @ ? 4.5 v 52 m @ ? 2.5 v 79 m @ ? 1.8 v ? 3.7 a ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NTR2101Pt1g sot ? 23 (pb ? free) 3000/tape & reel http://onsemi.com d g s p ? channel sot ? 23 case 318 style 21 marking diagram & pin assignment tr7 = specific device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. tr7 m 1 gate 2 source drain 3 1 2 3
NTR2101P http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 8.0 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 10 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 6.4 v t j = 25 c ? 1.0 a t j = 125 c ? 100 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.40 ? 1.0 v negative threshold temperature coefficient v gs(th) /t j 0.0027 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 3.5 a 39 52 m v gs = ? 2.5 v, i d = ? 3.0 a 52 72 v gs = ? 1.8 v, i d = ? 2.0 a 79 120 forward transconductance g fs v gs = ? 5.0 v, i d = ? 3.5 a 9.0 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 4.0 v 1173 pf output capacitance c oss 289 reverse transfer capacitance c rss 218 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 4.0 v, i d = ? 3.5 a 12 15 nc gate ? to ? source charge q gs 3.8 gate ? to ? drain charge q gd 2.5 switching characteristics (note 3) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 4.0 v, i d = ? 1.2 a, r g = 6.0 7.4 15 ns rise time t r 15.75 25 turn ? off delay time t d(off) 38 58 fall time t f 31 51 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 1.2 a t j = 25 c ? 0.73 ? 1.2 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTR2101P http://onsemi.com 3 0 2 4 6 8 10 012345 v gs = ? 2.6 v to ? 6.0 v v gs = ? 2.4 v v gs = ? 2.2 v v gs = ? 2.0 v v gs = ? 1.8 v v gs = ? 1.4 v v gs = ? 1.2 v ? v ds , drain ? to ? source voltage (v) ? i d , drain current (a) figure 1. on ? region characteristics 0 2 4 6 8 10 01234 t j = 25 c ? v gs , gate ? to ? source voltage (v) ? i d , drain current (a) figure 2. transfer characteristics v ds ? 10 v t j = 25 c t j = 150 c t j = ? 55 c 0 0.05 0.1 0.15 0.2 0.25 0123456 ? v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) figure 3. on ? resistance versus gate ? to ? source voltage i d = ? 3.7 a t j = 25 c 0 0.02 0.04 0.06 0.08 2345678 ? i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) t j = 150 c t j = 25 c t j = ? 55 c figure 4. on ? resistance versus drain current and gate voltage v gs = ? 4.5 v 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 1.7 ? 50 ? 25 0 25 50 75 100 125 150 1.0 t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance (normalized) figure 5. on ? resistance variation with temperature i d = ? 3.7 a v gs = ? 4.5 v 100 1000 10000 100000 02468 ? v ds , drain ? to ? source voltage (volts) figure 6. drain ? to ? source leakage current versus voltage v gs = 0 v t j = 150 c t j = 100 c i dss , leakage (na)
NTR2101P http://onsemi.com 4 0 500 1000 1500 2000 2500 ? 4 ? 20 2 4 6 8 figure 7. capacitance variation c, capacitance (pf) ? v gs ? v ds gate ? to ? source or drain ? to ? source voltage (v) c rss c oss t j = 25 c c iss v gs = 0 v ds = 0 0 1 2 3 4 5 02468101214 0 1 2 3 4 5 q g , total gate charge (nc) ? v gs , gate ? to ? source voltage (v) figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge ? v ds , drain ? to ? source voltage (v) t j = 25 c i d = ? 3.5 a q t q gs q ds v ds v gs 0 1 2 3 4 5 6 0.3 0.45 0.6 0.75 0.9 1.05 1.2 1 10 100 1000 1 10 100 v dd = ? 4.0 v i d = ? 1.0 a v gs = ? 4.5 v t r t d(off) t d(on) t f t, time (ns) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) ? v sd , source ? to ? drain voltage (v) ? i s , source current (a) figure 10. diode forward voltage versus current v gs = 0 v t j = 25 c
NTR2101P http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 21: pin 1. gate 2. source 3. drain 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 NTR2101P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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